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The APTGT50DA120TG is a single IGBT module manufactured by Microchip Technology, utilizing silicon technology. It features a maximum collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current of 75 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.7 V and a gate-emitter leakage current of 400 nA. Power dissipation is rated at 277 W, with an operating temperature range from -40°C to +100°C. The module employs the SP4 package style and supports screw mounting.
Verify component authenticity through authorized Microchip Technology distributors or certified suppliers. Confirm RoHS compliance status via official documentation before integration. Ensure storage conditions align with semiconductor handling standards to prevent moisture damage. Validate package integrity upon receipt to ensure proper electrical connections during assembly.
Select this module for applications requiring 1.2 kV blocking voltage and 75 A continuous current handling. The SP4 package suits designs needing screw-mount stability. Verify thermal management requirements against the 277 W power dissipation rating. Ensure gate drive signals remain within the specified ±20 V limits for reliable operation.
This component belongs to the APTGT series of IGBT modules from Microchip Technology. The series utilizes trench field-stop technology for improved switching performance. The SP4 package designation indicates a specific form factor within the manufacturer's modular lineup, distinct from other series like APTGL or APTM.
Publicly confirmed substitute part numbers are not available in verified sources. Cross-referencing requires matching VCEO, Ic, and package dimensions. Consult Microchip Technology engineering support for qualified alternatives if direct replacement is necessary.