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Product Detailed Parameters
- Description：IGBT MODULE 600V 80A 176W SP3
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Dual Boost Chopper
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 50A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP3
- Supplier Device Package：SP3
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：80 A
- Power - Max：176 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：3.15 nF @ 25 V
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Overview
The APTGT50DDA60T3G is a silicon IGBT module manufactured by Microchip Technology, housed in an SP3-32 package. It features a dual configuration with a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current of 80 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.5 V and a power dissipation rating of 176 W. Gate-emitter leakage current is specified at 600 nA, with a maximum gate-emitter voltage of 20 V. Operating temperatures range from -40°C to +100°C, and the unit utilizes screw mount installation.
Feature Summary
- Dual configuration designed for specific power conversion topologies
- Trench field-stop IGBT technology for efficient switching
- Integrated NTC thermistor for thermal monitoring
Applications
- Dual boost chopper circuits
- Industrial motor drives
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the specific suffix against official Microchip documentation to confirm pinout and internal configuration. Ensure the ordering part number matches the exact electrical requirements. Check for recent Product Change Notifications (PCN) or Design Transfer Sheets (DTS) that may affect specifications. Confirm RoHS compliance status through the manufacturer's latest datasheet before finalizing procurement.
Selection Notes
Select this component for applications requiring a 600 V rated dual IGBT structure within the SP3 footprint. Evaluate the 80 A continuous current rating against thermal management capabilities. Compare the 1.5 V saturation voltage and 176 W dissipation limits with system heat sink designs. Verify compatibility with the integrated NTC sensor for precise temperature control loops.
Part Context
This module belongs to the APTGT series of trench field-stop IGBT modules from Microchip Technology. It shares the SP3-32 mechanical outline with other variants like the APTGT50H60T3G full bridge and APTGT50TL60T3G half bridge. The series emphasizes high reliability and compact packaging for industrial power electronics.
Replacement Considerations
Direct replacements must match the 600 V, 80 A, dual configuration and SP3-32 package. Verify equivalent saturation voltage and thermal resistance characteristics. Cross-reference with other Microchip dual IGBT modules in the same series if availability is constrained.
