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Product Detailed Parameters
- Description：IGBT MODULE 1200V 75A 277W SP3
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Asymmetrical Bridge
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 50A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP3
- Supplier Device Package：SP3
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：75 A
- Power - Max：277 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：3.6 nF @ 25 V
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Overview
The APTGT50DH120T3G is an IGBT module manufactured by Microsemi Corporation. It features a trench field stop technology configuration with an asymmetrical bridge topology. The device supports a maximum collector-emitter breakdown voltage of 1200V and a continuous collector current of 75A. Maximum power dissipation is rated at 277W. The on-state collector-emitter voltage is specified as 2.1V at 15V gate drive and 50A collector current. Input capacitance is 3.6nF at 25V, with a maximum collector cutoff current of 250µA. An integrated NTC thermistor is included for thermal monitoring. The operating junction temperature range spans from -40°C to 150°C.
Feature Summary
- Utilizes trench field stop technology for optimized switching performance
- Integrates an NTC thermistor for direct thermal state monitoring
- Designed with an asymmetrical bridge configuration for high-voltage applications
Applications
- On-board electric vehicle chargers
- Off-board DC fast charging systems
- Switch mode power supplies (SMPS)
- DC-DC converters
Procurement Notes
Verify the specific suffix 'T3G' against official Microsemi documentation to confirm package type and tape-and-reel specifications. Ensure the component matches the active status indicated in distributor catalogs. Cross-reference the manufacturer part number with the original datasheet to validate pinout compatibility before procurement.
Selection Notes
Select this module for applications requiring 1200V blocking capability and up to 75A continuous current handling. The integrated NTC sensor facilitates precise thermal management in compact designs. Verify that the driving circuitry can support the required gate voltage levels to achieve the specified 2.1V Vce(on) characteristic under load conditions.
Part Context
This component belongs to the Microsemi APTGT series of insulated gate bipolar transistors. The series utilizes proprietary trench field stop technology to enhance efficiency. These modules are engineered for high-frequency operation, typically supporting switching frequencies up to 20 kHz while maintaining low tail current characteristics.
Replacement Considerations
The document references the APTGT50DH120TG variant. Verify if the 'T3G' suffix denotes a specific packaging or environmental compliance difference compared to other suffixes within the same electrical specification family.
