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The APTGT50DH170TG is a dual IGBT power module manufactured by Microchip Technology, housed in the SP4 package. It features a maximum collector-emitter voltage (VCEO) of 1.7 kV and a continuous collector current of 75 A at 25°C. The device exhibits a collector-emitter saturation voltage of 2 V and a gate-emitter leakage current of 400 nA. Power dissipation is rated at 312 W, with an operating temperature range from -40°C to +100°C. The module utilizes silicon technology and supports screw mount installation.
Verify the specific datasheet revision and product change notifications prior to procurement. Confirm that the SP4 package dimensions and pinout match the target design requirements. Ensure thermal interface materials are compatible with the module's mounting surface. Check for any recent manufacturing updates that may affect electrical characteristics or mechanical tolerances.
Select this component when a dual IGBT configuration is required for high-voltage applications. The 1.7 kV rating suits medium-voltage industrial systems. Evaluate the 75 A current capacity against peak load demands. Consider the SP4 package size for PCB or chassis layout constraints. Verify gate drive voltage compatibility with the 20 V maximum rating.
This part belongs to the APTGT series of IGBT modules from Microchip Technology. The series includes various configurations such as single, dual, and three-phase modules. The SP4 package is common for mid-power applications requiring screw mounting. Other variants in the family offer different voltage ratings and current capacities.
Direct substitutes include other Microchip dual IGBT modules in the SP4 package with similar voltage and current ratings, such as the APTGT50SK170TG. Verify pinout compatibility and thermal resistance values before substitution.