APTGT50H170TG

Overview

The APTGT50H170TG is a silicon IGBT module manufactured by Microchip Technology, housed in the SP4 screw-mount package. It features a dual configuration with a maximum collector-emitter voltage (VCEO) of 1.7 kV and a continuous collector current of 75 A at 25°C. The device exhibits a collector-emitter saturation voltage of 2 V and a gate-emitter leakage current of 400 nA. Maximum power dissipation is rated at 312 W, while the gate-emitter maximum voltage is 20 V. The module operates within a temperature range of -40°C to +100°C.

Feature Summary

• Dual IGBT configuration for high-voltage switching applications
• SP4 screw-mount package design for robust mechanical installation
• Silicon technology optimized for industrial power conversion

Applications

• High-voltage motor drives
• Industrial inverters
• Uninterruptible power supplies

Procurement Notes

Verify the specific datasheet revision and product change notifications prior to ordering, as manufacturing parameters may be updated. Confirm that the SP4 package dimensions and thermal characteristics align with the target heatsink interface. Ensure the gate drive circuitry supports the specified 20 V maximum gate-emitter voltage limits to prevent device damage during operation.

Selection Notes

Select this component when a 1.7 kV rating is required for dual-switch topologies. Compare the 75 A continuous current capability against peak load requirements. Evaluate the 312 W power dissipation limit against the available cooling solution efficiency. Verify compatibility with the SP4 mounting footprint and screw torque specifications defined in the mechanical drawings.

Part Context

This module belongs to the APTGT series of high-power IGBT modules from Microchip Technology. It utilizes standard silicon planar trench field-stop technology. The SP4 package provides a standardized form factor for medium-power industrial applications requiring high voltage isolation and reliable thermal management through direct baseplate mounting.

Replacement Considerations

Direct replacements must match the 1.7 kV voltage class, dual configuration, and SP4 package outline. Verify equivalent current ratings and saturation voltages to ensure thermal performance parity. Cross-reference pinouts and electrical characteristics with alternative manufacturers' high-voltage IGBT modules before implementation.