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Product Detailed Parameters
- Description：IGBT MODULE 600V 80A 176W SP3
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Full Bridge Inverter
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 50A
- Input：Single Phase Bridge Rectifier
- NTC Thermistor：Yes
- Operating Temperature：-
- Mounting Type：Chassis Mount
- Package / Case：SP3
- Supplier Device Package：SP3
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：80 A
- Power - Max：176 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：3.15 nF @ 25 V
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Overview
The APTGT50H60RT3G is a trench field-stop IGBT module manufactured by Microchip Technology. It features a full bridge inverter configuration housed in an SP3 base-mounted package. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 80 A at 25°C. Maximum power dissipation is rated at 176 W, with a junction temperature range from -40°C to 175°C. The saturation voltage is specified as 1.9 V maximum at 15 V gate drive and 50 A collector current. Input capacitance is 3.15 nF at 25 V, and leakage current is 250 µA.
Feature Summary
- Trench field-stop technology for optimized switching performance
- Integrated NTC thermistor for thermal monitoring
- Full bridge inverter topology integration
- Base-mounted design for efficient heat sinking
Applications
- Induction heating systems
- Uninterruptible power supplies (UPS)
- High-frequency welding inverters
Procurement Notes
Verify the specific suffix RT3G against official Microchip documentation to confirm packaging and tape-and-reel specifications. Ensure compatibility with existing PCB footprints for the SP3 package. Confirm RoHS compliance status through the manufacturer's latest datasheet or product change notification records before finalizing procurement orders.
Selection Notes
Select this component when a 600 V, 80 A full bridge configuration is required within an SP3 footprint. Compare the 1.9 V saturation voltage at 50 A against system loss requirements. Verify that the 176 W power dissipation rating aligns with the available thermal management infrastructure and ambient operating conditions.
Part Context
This module belongs to the APTGT50 series of high-power IGBT modules. It shares core electrical characteristics with variants like APTGT50H60T3G but differs in packaging format. The SP3 package distinguishes it from other form factors in the lineup, offering specific mechanical mounting solutions for industrial power applications.
Replacement Considerations
APTGT50H60T3G offers identical electrical ratings but utilizes a different SP3-32 package variant. Verify mechanical pinout and mounting hole dimensions before substitution. APTGT50DH60T1G provides similar voltage and current specs but uses an SP1 package.
