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The APTGT50SK170TG is a silicon IGBT power module manufactured by Microchip Technology, designed for high-voltage switching applications. It features a single configuration housed in an SP4 screw-mount package. The device supports a maximum collector-emitter voltage of 1.7 kV and delivers a continuous collector current of 75 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2 V and a gate-emitter leakage current of 400 nA. The module handles a power dissipation of 312 W and operates within a junction temperature range of -40°C to +100°C.
Verify the specific manufacturing lot and date code upon receipt to ensure compliance with project timelines. Confirm that the SP4 package dimensions match the intended heatsink interface. Check for any product change notifications related to this part number to ensure material consistency with existing designs.
Select this component when a single-switch topology is required for 1.7 kV applications. Ensure the thermal management system can handle 312 W dissipation while maintaining the junction temperature below 100°C. Verify that the drive circuit provides the appropriate 20 V gate-emitter voltage limit for safe operation.
This module belongs to the APTGT series of trench field-stop IGBTs from Microchip Technology. It complements other variants like the APTGT50SK170D3G but differs in packaging and specific thermal characteristics. The SP4 package distinguishes it from higher-current D3-series modules, targeting moderate current density applications.
Direct replacements are not explicitly listed in public documentation. Evaluate the APTGT50SK170D3G for similar electrical ratings, noting the difference in package type (D3-11 vs. SP4). Ensure any substitute matches the 1.7 kV rating and 75 A current capacity while accommodating the mechanical footprint constraints.