SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Microchip Technology APTGT50TL60T3G is a single IGBT power module utilizing trench field-stop technology. It features a maximum collector-emitter voltage (Vceo) of 600 V and a continuous collector current of 50 A at 25°C. The device has a typical collector-emitter saturation voltage of 1.9 V at 50 A and 15 V gate drive. Maximum power dissipation is rated at 176 W. It operates within a junction temperature range of -40°C to +175°C. The component is housed in an SP3 screw-mount package.
Verify the specific suffix T3G against official Microchip documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with existing thermal interface materials and mounting hardware for the SP3 footprint. Cross-reference the latest datasheet revision to validate electrical parameters before finalizing procurement orders.
Select this module for applications requiring 600 V blocking capability and moderate current handling up to 50 A. Consider the SP3 package dimensions for PCB or chassis layout constraints. Evaluate thermal management requirements based on the 176 W power dissipation rating and ensure the cooling solution supports the specified junction temperature limits under expected load conditions.
This component belongs to the APTGT series of IGBT modules from Microchip Technology, formerly known as Advanced Power Technology. The series utilizes trench field-stop technology to balance conduction losses and switching speeds. The APTGT50TL60T3G specifically targets single-switch applications within the 600 V voltage class.
Direct substitutes include other Microchip APTGT series modules with identical 600 V ratings and SP3 packaging, such as the APTGT50H60T3G for full-bridge configurations or APTGT50DH60T1G for asymmetric bridge setups. Verify pinout compatibility and thermal characteristics when considering alternative part numbers.