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The APTGT50X60T3G is a silicon IGBT module manufactured by Microchip Technology, housed in an SP-3 screw-mount package. It features a 3-phase inverter configuration with a maximum collector-emitter voltage of 600 V and a continuous collector current of 80 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.5 V and a gate-emitter leakage current of 600 nA. Power dissipation is rated at 176 W, with a maximum gate-emitter voltage of 20 V. Operating temperatures range from -40°C to +175°C junction temperature.
Verify the specific suffix T3G against official Microchip documentation to confirm packaging and tape-and-reel specifications. Ensure the SP-3 package dimensions match the target heatsink interface. Confirm RoHS compliance status through the manufacturer's latest datasheet before finalizing procurement orders.
Select this component when a 600V rating and 80A continuous current are required for three-phase topologies. The SP-3 package offers a balance of current capacity and thermal management for medium-power applications. Verify that the system's cooling solution can handle the 176W power dissipation rating under worst-case operating conditions.
This part belongs to the APTGT series of high-speed IGBT modules from Microchip Technology. It shares the SP-3 form factor with other variants like the APTGT50H60RT3G but differs in internal configuration as a 3-phase inverter rather than a full bridge or single switch.
Direct substitutes include other Microchip APTGT50 series modules in the SP-3 package, such as the APTGT50H60RT3G, provided the electrical parameters and pinout compatibility are verified against the specific application requirements.