APTGT75DA60T1G

Overview

The APTGT75DA60T1G is a single IGBT module manufactured by Microchip Technology, utilizing silicon technology. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current of 100 A at 25°C. The saturation voltage is specified at 1.5 V, with a power dissipation rating of 250 W. The device operates within a temperature range of -40°C to +100°C and uses an SP1-12 package designed for screw mounting. Maximum gate-emitter voltage is limited to 20 V, and the gate-emitter leakage current is 600 nA.

Feature Summary

• Single configuration IGBT module with screw mount installation style
• SP1-12 package design for thermal management
• Silicon-based trench field-stop technology

Applications

• Industrial motor drives
• Uninterruptible power supplies
• Inverter circuits

Procurement Notes

Verify the specific ordering suffix and manufacturer documentation to confirm exact electrical characteristics and mechanical dimensions. Ensure compatibility with existing thermal interface materials and mounting hardware specifications before integration into final designs.

Selection Notes

Select this component for applications requiring a 600 V rated single IGBT with 100 A continuous current capability. Consider the SP1-12 package constraints and screw mount requirements when designing the PCB layout and heatsink interface for adequate thermal performance.

Part Context

This part belongs to the Microchip Technology IGBT module family, specifically the PM-IGBT-TFS-SP1 series. It is designed for general purpose power switching applications where moderate voltage and current ratings are required in a compact form factor.

Replacement Considerations

Consult official substitution guides for compatible alternatives within the same voltage and current class. Verify pinout compatibility and thermal resistance values before replacing existing components in established designs.