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Product Detailed Parameters
- Description：IGBT MODULE 1200V 110A 357W SP3
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Asymmetrical Bridge
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 75A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP3
- Supplier Device Package：SP3
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：110 A
- Power - Max：357 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：5.34 nF @ 25 V
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Overview
The APTGT75DH120T3G is a silicon IGBT module manufactured by Microchip Technology, housed in the SP3-32 package. It features a dual configuration with an integrated anti-parallel diode. The device supports a maximum collector-emitter voltage of 1200 V and delivers a continuous collector current of 75 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.7 V, a gate-emitter leakage current of 400 nA, and a power dissipation rating of 277 W. The module operates within a junction temperature range of -40°C to +150°C and utilizes screw mount installation.
Feature Summary
- Dual IGBT configuration with integrated anti-parallel diode for efficient switching applications
- High voltage capability suitable for industrial power conversion systems
- Robust thermal performance with defined power dissipation limits
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Inverter circuits
Procurement Notes
Verify the specific suffix T3G against official Microchip documentation to confirm pinout and packaging details. Ensure compatibility with existing thermal management solutions given the 277 W dissipation rating. Confirm RoHS compliance status through the manufacturer's latest datasheet before integration into regulated equipment designs.
Selection Notes
Select this component when a 1200 V rating and 75 A current capacity are required in a compact SP3 package. Compare the 1.7 V saturation voltage against alternative modules to assess conduction losses. Evaluate the thermal resistance characteristics relative to the intended heatsink design to ensure reliable operation within the specified temperature range.
Part Context
This module belongs to the APTGT series of discrete IGBT power modules from Microchip Technology. It shares the SP3-32 form factor with other devices in the lineup, facilitating standardized mounting on printed circuit boards or thermal substrates. The series targets medium-power applications requiring reliable high-voltage switching capabilities.
Replacement Considerations
Direct replacements must match the 1200 V, 75 A, dual configuration specifications and SP3-32 footprint. Verify equivalent saturation voltage and thermal resistance values to maintain system performance. Cross-reference with Microchip's product change notifications for any functional updates.
