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The APTGT75DU120TG is a dual IGBT power module manufactured by Microchip Technology, designed for high-power switching applications. It features a Trench 3 silicon technology with a maximum collector-emitter voltage of 1200 V and a continuous collector current of 75 A at a case temperature of 80°C. The module exhibits a typical collector-emitter saturation voltage of 1.7 V and supports a power dissipation of 357 W. Packaged in the SP4 form factor with screw mount installation, it operates within a junction temperature range from -40°C to +125°C.
Verify component authenticity through authorized Microchip distributors or certified partners. Confirm that the specific part number matches the required SP4 package and electrical ratings. Ensure compliance with RoHS directives and check for any product change notifications that may affect specifications or manufacturing origin before finalizing procurement orders.
Select this module when a dual IGBT configuration with 1200 V blocking capability is required. The 75 A current rating suits moderate power density designs. Consider the SP4 package dimensions for PCB layout and heatsink compatibility. Evaluate thermal resistance requirements against the 357 W dissipation limit to ensure reliable operation under expected load conditions.
This component belongs to the APTGT series of insulated gate bipolar transistor modules. It represents Microchip's discrete power solutions utilizing advanced silicon planar trench technology. The series targets applications demanding high reliability and efficient power conversion in industrial and commercial environments.
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching electrical parameters such as voltage, current, and package type with alternative manufacturers' offerings.