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The APTGT75TL60T3G is a single IGBT module manufactured by Microchip Technology, utilizing silicon technology. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current of 100 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.5 V and a power dissipation rating of 250 W. It operates within a temperature range of -40°C to +100°C. The module is housed in an SP3-32 package with screw mount installation style and has a maximum gate-emitter voltage of 20 V.
Verify the specific datasheet revision and RoHS compliance status directly from Microchip Technology before procurement. Confirm that the SP3-32 package dimensions and mounting hole patterns match the intended heatsink or PCB layout requirements. Ensure thermal interface materials are compatible with the module's base plate specifications for optimal heat dissipation performance.
Select this component when a 600 V rated single IGBT with 100 A continuous current capability is required. The SP3-32 package offers a compact form factor suitable for space-constrained designs. Evaluate the 1.5 V saturation voltage against system efficiency targets and ensure the 250 W power dissipation rating aligns with the available cooling infrastructure and ambient operating conditions.
This part belongs to the APTGT series of IGBT modules from Microchip Technology. The series typically includes various configurations such as single, half-bridge, and full-bridge modules with different voltage and current ratings. The APTGT75TL60T3G specifically addresses mid-power applications requiring robust switching performance in a standard industrial package.
Direct replacements must match the 600 V rating, 100 A current capacity, and SP3-32 package footprint. Verify pinout compatibility and electrical characteristics such as Vce(sat) and switching times. Consult Microchip Technology for officially recommended cross-reference parts or updated series components.