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Product Detailed Parameters
- Description：IGBT MODULE 650V 100A 250W SP1
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：-
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 100A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：SP1
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：100 A
- Power - Max：250 W
- Current - Collector Cutoff (Max)：100 µA
- Input Capacitance (Cies) @ Vce：6 nF @ 25 V
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Overview
The APTGTQ100A65T1G is a silicon IGBT module manufactured by Microchip Technology, housed in an SP1-12 package. It features a half-bridge configuration with a maximum collector-emitter voltage of 650 V and a continuous collector current of 100 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.5 V and supports a power dissipation of 250 W. Operating temperatures range from -40°C to +100°C, with a maximum gate-emitter voltage of 20 V.
Feature Summary
- Integrates an NTC thermistor for thermal monitoring
- Utilizes silicon technology for robust switching performance
- Designed for screw mount installation
Applications
- Industrial motor drives
- Uninterruptible power supplies
- High-frequency inverters
Procurement Notes
Verify the specific suffix against official datasheets to confirm electrical ratings and pinout compatibility. Confirm that the SP1-12 package dimensions match your mechanical constraints. Ensure thermal interface materials are compatible with the specified operating temperature range. Cross-reference manufacturer documentation for any recent design changes or errata notices before finalizing procurement.
Selection Notes
Select this component when a 650V half-bridge topology is required with high current handling capabilities. The integrated NTC sensor simplifies thermal management strategies compared to modules requiring external sensing. Evaluate the 1.5V saturation voltage against system efficiency targets. Consider the SP1-12 form factor for standard mounting solutions in power electronics enclosures.
Part Context
This part belongs to the APTGT series of IGBT modules from Microchip Technology. It shares the SP1-12 package family with other variants like the APTGT50H60T1G but differs in voltage rating and internal bridge configuration. The series is designed for general-purpose power conversion applications requiring reliable semiconductor switching.
Replacement Considerations
Direct substitutes within the same package and rating include the APTGTQ100H65T3G, which offers similar electrical characteristics but may differ in specific thermal or switching parameters. Verify pin-to-pin compatibility and thermal resistance values before substitution.
