SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The APTGTQ100H65T3G is a silicon IGBT module manufactured by Microchip Technology, designed for high-power switching applications. It features a quad configuration housed in an SP3F screw-mount package. The device supports a maximum collector-emitter voltage of 650 V and delivers a continuous collector current of 100 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.65 V, a gate-emitter leakage current of 240 nA, and a power dissipation rating of 250 W. The module operates within a temperature range of -40°C to +125°C and utilizes standard NTC thermistor input.
Verify the specific ordering suffix against official Microchip documentation to confirm pinout compatibility and thermal characteristics. Confirm RoHS compliance status through the manufacturer's latest environmental declarations. Ensure the procurement channel sources directly from authorized distributors to guarantee authenticity and traceability of the semiconductor components.
Select this component when a quad IGBT topology is required for medium-power inversion tasks. The 650 V rating suits low-voltage AC/DC conversion systems. Evaluate the SP3F package dimensions against available heatsink constraints. Verify that the 100 A continuous current rating aligns with the peak load requirements of the target application circuit.
This part belongs to the APTGT series of trench field-stop IGBT modules from Microchip Technology. The series emphasizes high-speed switching capabilities and improved thermal performance compared to previous generations. The SP3F packaging variant offers a standardized footprint for modular integration in industrial power electronics platforms.
Publicly confirmed substitute part numbers are not available in the provided reference data. Cross-referencing requires consulting official Microchip replacement guides or distributor equivalence matrices to ensure compatible electrical and mechanical specifications.