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Product Detailed Parameters
- Description：IGBT MODULE 650V 100A 250W SP1
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：-
- Configuration：Buck Chopper
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 100A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：SP1
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：100 A
- Power - Max：250 W
- Current - Collector Cutoff (Max)：100 µA
- Input Capacitance (Cies) @ Vce：6 nF @ 25 V
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Overview
The APTGTQ100SK65T1G is a silicon IGBT module manufactured by Microchip Technology. It features a quad configuration within an SP3F package designed for screw mounting. The device supports a maximum collector-emitter voltage of 650 V and delivers a continuous collector current of 100 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.65 V, a gate-emitter leakage current of 240 nA, and a power dissipation rating of 250 W. The unit operates reliably between -40°C and +125°C.
Feature Summary
- Quad IGBT configuration for multi-phase applications
- SP3F package design optimized for thermal management
- High-speed switching capability with low saturation voltage
Applications
- Three-phase motor drives
- Industrial inverter systems
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the exact part number against official Microchip documentation to ensure compatibility with specific system requirements. Confirm that the SP3F package dimensions and terminal configurations match the intended mechanical assembly. Cross-reference datasheet specifications for thermal resistance and mounting torque to guarantee reliable operation under expected load conditions.
Selection Notes
Select this component when a quad IGBT topology is required for high-current applications up to 100 A. The 650 V rating suits standard industrial voltage levels. Ensure the cooling solution can handle the 250 W power dissipation. Verify that the operating temperature range meets the environmental constraints of the target equipment.
Part Context
This module belongs to the APTGTQ series of silicon IGBT modules from Microchip Technology. It utilizes the SP3F package format, which is distinct from other series using SP1 or SP6 packages. The quad configuration allows for compact integration of multiple switching elements in a single unit.
Replacement Considerations
Direct substitutes must share the same quad configuration, 650 V rating, 100 A current capacity, and SP3F package footprint. Verify pinout compatibility and thermal characteristics before substitution.
