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The APTGTQ200A65T3G is a single IGBT module manufactured by Microchip Technology, utilizing silicon technology. It features a maximum collector-emitter voltage of 650 V and a continuous collector current of 200 A at 25°C. The device has a collector-emitter saturation voltage of 1.65 V and a power dissipation rating of 483 W. It operates within a temperature range of -40°C to +125°C and uses the SP3F package with screw mount installation.
Verify the exact part number against official Microchip documentation, as the specific suffix 'APTGTQ200A65T3G' may differ from standard listings. Confirm availability through authorized distributors and check for any recent product change notifications that might affect specifications or packaging.
Select this module for applications requiring 650 V blocking capability and 200 A current handling. Ensure the cooling solution supports the 483 W power dissipation. Verify compatibility with the SP3F footprint and screw-mount requirements during mechanical design integration.
This component belongs to the Microchip IGBT module family, specifically designed for power conversion systems. It shares the SP3F form factor with other modules in the series, facilitating interchangeability in designs where voltage ratings align with system requirements.
Direct substitutes include the APTGTQ200SK65T3G, which shares identical electrical parameters and package type. Verify pinout compatibility and thermal characteristics before substitution.