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Product Detailed Parameters
- Description：PM-IGBT-TFS-SP3F
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：-
- Configuration：Dual, Common Emitter
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 150A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：260 A
- Power - Max：777 W
- Current - Collector Cutoff (Max)：12 µA
- Input Capacitance (Cies) @ Vce：30000 pF @ 25 V
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Overview
The APTGX150DU120T3AG is a silicon-based IGBT module manufactured by Microchip Technology, housed in an SP3F package. It features a dual common emitter configuration with a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 260 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.8 V and a gate-emitter leakage current of 150 nA. Maximum power dissipation is rated at 777 W, while the gate-emitter voltage range spans from -20 V to +20 V. The module supports press-fit mounting and operates within a temperature range of -40°C to +125°C.
Feature Summary
- Dual common emitter configuration for efficient half-bridge applications
- Press-fit mounting style designed for robust mechanical connection
- Silicon technology optimized for high-power switching operations
Applications
- Industrial motor drives
- Uninterruptible power supplies
- High-frequency inverters
Procurement Notes
Verify the specific suffix T3AG against official datasheets to confirm packaging and material compliance details. Ensure that the SP3F press-fit footprint matches the target PCB or baseplate design requirements before integration. Cross-reference the latest product change notifications for any manufacturing updates.
Selection Notes
Select this component when a dual IGBT configuration with 1.2 kV blocking capability and 260 A current rating is required. The SP3F package and press-fit installation method are critical factors for thermal management and mechanical stability in high-power density designs. Compare saturation voltage and power dissipation ratings against system thermal constraints.
Part Context
This part belongs to the Microchip Power Modules series, specifically utilizing the SP3F form factor. It serves as a discrete power semiconductor solution within the broader portfolio of silicon-based IGBT modules offered by the manufacturer for industrial and energy conversion applications.
Replacement Considerations
Direct substitutes include other Microchip SP3F dual IGBT modules such as APTGT150A120T3AG, though differences in saturation voltage and package type must be evaluated. Verify pin compatibility and thermal characteristics before swapping components.
