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Product Detailed Parameters
- Description：PM-IGBT-TFS-SP3F
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：-
- Configuration：Dual, Common Emitter
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 200A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：350 A
- Power - Max：980 W
- Current - Collector Cutoff (Max)：15 µA
- Input Capacitance (Cies) @ Vce：40000 pF @ 25 V
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Overview
The APTGX200DU120T3AG is a silicon IGBT module manufactured by Microchip Technology, housed in the SP3F package. It features a dual common emitter configuration with a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 350 A at 25°C. The saturation voltage is 1.8 V, while power dissipation reaches 980 W. Gate-emitter leakage is limited to 150 nA, with a gate voltage range of -20 V to +20 V. Operating temperatures span from -40°C to +125°C, and it utilizes press-fit mounting for secure installation.
Feature Summary
- Dual common emitter topology for efficient half-bridge applications
- SP3F press-fit packaging ensures robust mechanical connection
- Silicon trench field-stop technology for optimized switching
Applications
- Industrial motor drives
- Uninterruptible power supplies
- High-frequency inverters
Procurement Notes
Verify the specific suffix T3AG against official datasheets to confirm manufacturing origin and compliance status. Ensure the receiving facility has appropriate press-fit tooling compatible with the SP3F footprint. Cross-reference RoHS documentation directly with the manufacturer's latest release notes before finalizing procurement orders.
Selection Notes
Select this component when a high-current 350 A rating is required within a compact SP3F form factor. The dual common emitter design simplifies gate drive circuitry compared to isolated configurations. Verify that the thermal management system can handle 980 W dissipation while maintaining junction temperatures within the specified -40°C to +125°C operational window.
Part Context
This module belongs to the APTGX series of high-power IGBT modules designed for demanding industrial environments. The SP3F package represents a standardized footprint within Microchip's portfolio, facilitating board layout consistency across different current ratings in the same family.
Replacement Considerations
Direct pin-compatible replacements within the SP3F package include other APTGX variants with matching voltage and current ratings. Verify thermal resistance values and gate charge specifications when substituting with similar models to ensure driver compatibility.
