APTGX200H120G

Overview

The APTGX200H120G is a silicon-based IGBT power module manufactured by Microchip Technology. It features a full bridge configuration housed in an SP6C package with screw mount installation style. The device supports a maximum collector-emitter voltage of 1.2 kV and delivers a continuous collector current of 280 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.8 V, a gate-emitter leakage current of 150 nA, and a power dissipation rating of 682 W. The unit operates within a temperature range of -40°C to +125°C, with a maximum gate-emitter voltage of ±20 V.

Feature Summary

• Full bridge topology integrates multiple switching elements for efficient power conversion circuits.
• SP6C packaging provides a standardized form factor compatible with established thermal management solutions.
• High-temperature operation capability up to 125°C ensures reliability in demanding environments.

Applications

• Industrial motor drives
• Uninterruptible power supplies
• Inverter systems

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with Microchip Technology or authorized distributors before procurement. Confirm that the SP6C package dimensions match the target PCB footprint and heatsink interface requirements. Ensure the supply chain source is authorized to guarantee component authenticity and traceability.

Selection Notes

Select this module when a full bridge configuration is required with 1.2 kV blocking capability and 280 A continuous current handling. The SP6C package suits applications needing screw-mount integration. Evaluate thermal resistance characteristics against the system's cooling capacity to ensure the 682 W power dissipation limit is not exceeded under worst-case operating conditions.

Part Context

This component belongs to Microchip Technology's high-speed IGBT4 power module family. These modules are engineered for 1200V applications, emphasizing low voltage drop and reduced switching losses compared to previous generations. The APTGX200H120G specifically utilizes silicon technology within the SP6C housing to deliver robust performance in medium-power industrial applications.

Replacement Considerations

Cross-reference with other Microchip SP6C full bridge modules such as APTGT200H120G for potential pin-compatible alternatives. Verify that substitute parts maintain identical voltage, current, and thermal specifications to ensure seamless integration without redesigning the host circuit board or cooling infrastructure.