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Product Detailed Parameters
- Description：PM-IGBT-TFS-SP6C
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：-
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 300A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：385 A
- Power - Max：1.034 kW
- Current - Collector Cutoff (Max)：25 µA
- Input Capacitance (Cies) @ Vce：31300 pF @ 25 V
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Overview
The APTGX300A170T6G is a silicon IGBT power module manufactured by Microchip Technology. It features a dual common emitter configuration housed in an SP6C screw-mount package. The device supports a maximum collector-emitter voltage of 1.7 kV and delivers a continuous collector current of 385 A at 25°C. Key electrical parameters include a saturated collector-emitter voltage of 1.7 V, a gate-emitter leakage current of 150 nA, and a power dissipation rating of 1.034 kW. The module operates within a temperature range of -40°C to +175°C with a maximum gate-emitter voltage of 20 V.
Feature Summary
- Dual common emitter topology for bridge leg applications
- High thermal stability supporting junction temperatures up to 175°C
- Robust 1.7 kV blocking capability for high-voltage systems
- Screw-mount construction for secure mechanical integration
Applications
- Industrial motor drives
- Uninterruptible power supplies
- Induction heating systems
Procurement Notes
Verify the exact part number against official Microchip documentation, as the specific suffix T6G requires confirmation of manufacturing status and revision level. Check for product change notifications regarding packaging or material composition updates before finalizing procurement orders to ensure compliance with project specifications.
Selection Notes
Select this component for designs requiring high current handling in a compact dual configuration. Ensure the cooling solution accommodates the 1.034 kW power dissipation limit. Verify that the drive circuitry provides the required 20 V gate-emitter voltage tolerance and matches the switching characteristics of the 1.7 V saturation voltage profile.
Part Context
This module belongs to the APTGX series of high-power IGBT modules from Microchip Technology. It utilizes standard silicon technology and is designed for demanding power conversion environments. The SP6C package provides a standardized footprint for mounting and thermal management in industrial power electronics assemblies.
Replacement Considerations
Consult Microchip datasheets for direct replacements within the APTGX series. Verify pin compatibility and thermal resistance values when considering alternative packages such as D1 or other SP variants.
