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The APTGX300A170T6LIAG is a silicon IGBT power module manufactured by Microchip Technology. It features a dual configuration within the PM-IGBT-TFS-SP6LIAG package, designed for screw mounting. The device supports a maximum collector-emitter voltage of 1.7 kV and delivers a continuous collector current of 545 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.7 V, a gate-emitter leakage current of 400 nA, and a maximum gate-emitter voltage of 20 V. The module handles a power dissipation of 1.807 kW and operates reliably across a temperature range from -40°C to +175°C.
Verify component authenticity through authorized Microchip Technology distributors or certified supply chain partners. Confirm RoHS compliance status via official datasheets before integration. Ensure packaging integrity during handling to prevent mechanical damage to the screw-mount terminals. Validate part number suffixes against current manufacturer documentation to confirm specific variant characteristics.
Select this module for applications demanding high continuous current handling with robust thermal performance. The 1.7 kV rating suits medium-voltage industrial environments. Compare power dissipation limits against system cooling capabilities. Ensure driver circuits support the specified 20 V gate-emitter voltage threshold. Verify physical compatibility with existing screw-mount heat sink interfaces.
This component belongs to the Microchip APTGX series of high-power IGBT modules. It utilizes advanced silicon technology optimized for industrial power electronics. The SP6LIAG package provides a standardized form factor for high-current applications. It represents a specialized solution for demanding electrical environments requiring reliable switching performance.
Direct substitutes include APTGX300DU170T6G and APTGX300A170D3G. These alternatives share similar voltage and current ratings but may differ in package type or internal configuration. Verify pinout compatibility and thermal resistance values before substitution.