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The APTGX300DU120T6G is a dual common emitter IGBT power module manufactured by Microchip Technology. It features a TFS-SP6C package designed for high-power applications. The device operates with a maximum collector-emitter voltage of 1.2 kV and delivers a continuous collector current of 415 A at 25°C. The saturation voltage is specified at 1.8 V, while the gate-emitter leakage current remains at 200 nA. Power dissipation capability reaches 1.02 kW. This component utilizes silicon technology and is classified under the PM-IGBT-TFS-SP6C product line.
Verify part authenticity through authorized Microchip Technology distributors or direct manufacturer channels. Confirm RoHS compliance status via official documentation before integration. Ensure storage conditions meet semiconductor handling standards to prevent moisture damage. Validate package integrity upon receipt to guarantee proper thermal interface performance during installation.
Select this module when designing circuits requiring 1.2 kV blocking voltage and high continuous current capacity. Consider the TFS-SP6C package dimensions for mechanical layout constraints. Evaluate thermal management solutions capable of dissipating up to 1.02 kW of power loss. Compare saturation voltage specifications against system efficiency requirements.
This component belongs to Microchip's high-speed IGBT4 power module series. These modules are engineered for robust performance in industrial environments. The TFS-SP6C packaging provides standardized mounting interfaces. The product represents an evolution in silicon-based power switching technology within the Microchip portfolio.
Consult official Microchip substitution guides for verified alternatives. Cross-reference electrical parameters such as voltage ratings and current capacities carefully. Verify package compatibility before attempting physical replacement.