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Product Detailed Parameters
- Description：PM-IGBT-TFS-SP6C
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：-
- Configuration：Dual, Common Emitter
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 300A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：385 A
- Power - Max：1.034 kW
- Current - Collector Cutoff (Max)：25 µA
- Input Capacitance (Cies) @ Vce：31300 pF @ 25 V
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Overview
The APTGX300DU170T6G is a silicon IGBT power module manufactured by Microchip Technology. It features a dual common emitter configuration housed in the PM-IGBT-TFS-SP6C package with screw mount installation. The device supports a maximum collector-emitter voltage of 1.7 kV and delivers a continuous collector current of 385 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.7 V, a gate-emitter leakage current of 150 nA, and a maximum power dissipation of 1.034 kW. The unit operates within a temperature range of -40°C to +175°C, with a maximum gate-emitter voltage of 20 V.
Feature Summary
- Dual common emitter topology for efficient half-bridge applications
- High thermal performance rated for junction temperatures up to 175°C
- Robust mechanical design utilizing screw mount installation style
Applications
- Industrial motor drives and inverters
- Uninterruptible power supply (UPS) systems
- Medium voltage variable frequency drives
Procurement Notes
Verify component authenticity through authorized Microchip Technology distributors or direct manufacturer channels. Confirm RoHS compliance status via official datasheets prior to integration. Ensure proper handling procedures are followed due to the sensitive nature of power semiconductor devices. Cross-reference ordering suffixes to confirm specific packaging and testing variations.
Selection Notes
Select this module for high-current applications requiring 1.7 kV blocking capability. Evaluate thermal management requirements against the 1.034 kW power dissipation rating. Ensure gate drive circuits accommodate the 20 V maximum gate-emitter voltage limit. Verify that the mounting hardware supports the screw mount configuration specified for the SP6C package.
Part Context
This component belongs to the Microchip Technology APTGX series of discrete and power modules. It utilizes silicon technology for robust power switching. The product falls under the broader category of IGBT power modules designed for demanding industrial and energy conversion environments.
Replacement Considerations
Consult official Microchip Technology documentation for verified substitute part numbers. Do not assume functional equivalence with other manufacturers' 1.7 kV IGBT modules without detailed parameter comparison.
