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The APTGX300H170G is a silicon IGBT power module manufactured by Microchip Technology. It features a full bridge configuration within an SP3F screw-mount package. The device supports a maximum collector-emitter voltage of 1.7 kV and delivers a continuous collector current of 120 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.7 V, a gate-emitter leakage current of 150 nA, and a maximum power dissipation of 1.807 kW. The module operates reliably across a temperature range from -40°C to +175°C, with a maximum gate-emitter voltage rating of 20 V.
Verify the specific datasheet revision and ordering suffixes directly with Microchip Technology or authorized distributors. Confirm RoHS compliance status and lead times through official channels before procurement. Ensure the component matches the required SP3F package dimensions for your application.
Select this module for applications requiring high voltage isolation and robust thermal performance in compact spaces. The 1.7 kV rating suits medium-voltage industrial systems. Verify that the 120 A current capacity meets peak load requirements and that the SP3F footprint aligns with existing PCB or busbar designs.
This component belongs to Microchip's APTGX series of high-performance IGBT modules. The series utilizes advanced trench gate technology to optimize switching losses and conduction characteristics. The SP3F package provides a standardized form factor for easy integration into various power electronic architectures.
Direct replacements must match the 1.7 kV voltage rating, 120 A current capacity, and SP3F package type. Consider modules like the APTGX75H170T3G if lower current is acceptable, but verify pin compatibility and thermal resistance specifications carefully.