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The Microchip Technology APTGX400A120D3G is a silicon-based IGBT power module belonging to the Trench 7 technology family. It features a half-bridge configuration housed in a D3 package with screw mount installation. The device supports a maximum collector-emitter voltage of 1.2 kV and exhibits a collector-emitter saturation voltage of 1.8 V. It provides a continuous collector current of 400 A at 25°C, with a gate-emitter leakage current of 200 nA. The module handles a power dissipation of 1.293 kW and operates within a temperature range of -40°C to +125°C.
Verify the specific datasheet revision and ordering suffixes to ensure compatibility with your system requirements. Confirm that the D3 package dimensions match your thermal management design. Check for any recent product change notifications regarding material composition or testing standards before finalizing procurement plans.
Select this component when a 1.2 kV half-bridge IGBT module is required for high-current industrial applications. Consider the 1.8 V saturation voltage and 400 A current rating against your thermal constraints. Ensure the screw mount style aligns with your existing busbar and cooling infrastructure.
This module is part of Microchip's high-speed IGBT4 series, designed for demanding power conversion tasks. It integrates advanced trench gate technology to balance low conduction losses with fast switching speeds. The D3 form factor allows for compact integration into larger power electronic systems.
Public confirmed substitute part numbers are not available in the provided documentation. Consult official Microchip resources for potential cross-references or updated series replacements.