SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The APTGX600A170D3G is a silicon-based IGBT power module manufactured by Microchip Technology. It features a dual configuration housed in the D3-11 package with screw mount installation. The device supports a maximum collector-emitter voltage of 1.7 kV and delivers a continuous collector current of 385 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.7 V, a gate-emitter leakage current of 150 nA, and a power dissipation rating of 1.034 kW. The module operates within a temperature range of -40°C to +175°C TJ.
Verify the specific suffix 'D3G' against official Microchip documentation to confirm pinout compatibility and thermal characteristics. Ensure that the D3-11 package dimensions match the target heatsink interface. Cross-reference the RoHS status and manufacturing origin details provided in the latest datasheet revision to meet regulatory requirements for the intended deployment region.
Select this component when a dual IGBT configuration with 1.7 kV rating is required. Compare the 385 A continuous current and 1.034 kW power dissipation limits against the system's peak load demands. Evaluate the +175°C junction temperature capability against the ambient operating conditions and cooling strategy to ensure reliable thermal management under worst-case scenarios.
This part belongs to the APTGX series of high-voltage IGBT modules from Microchip Technology. It shares the D3 package family with other variants like the APTGT300DA170D3G but differs in internal configuration and current ratings. The series is designed for demanding power conversion applications requiring high reliability and efficiency in industrial environments.
Direct substitutes are not explicitly listed in public data. Verify compatibility with alternatives such as the APTGT300DA170D3G by comparing pinouts, thermal resistance, and electrical ratings. Ensure any replacement maintains the same voltage class and package form factor.