SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The APTGX600DU170T6G is a dual common emitter IGBT power module manufactured by Microchip Technology. It utilizes silicon technology and operates within a temperature range of -40°C to +175°C. The device features a maximum collector-emitter voltage (VCEO) of 1.7 kV and a continuous collector current of 750 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.7 V, a gate-emitter leakage current of 200 nA, and a maximum gate-emitter voltage of 20 V. The module supports screw mount installation and has a power dissipation rating of 1.948 kW.
Verify the specific datasheet revision and product change notifications before integration. Confirm that the screw mount package dimensions match the mechanical design constraints. Ensure the gate drive circuitry adheres to the specified 20 V maximum gate-emitter voltage limits to prevent device damage during operation.
Select this component when designing circuits requiring high current handling at elevated voltages. The 750 A continuous current rating suits heavy-duty industrial loads. Verify that the system cooling solution can manage the 1.948 kW power dissipation effectively to maintain safe operating temperatures under full load conditions.
This module belongs to Microchip's IGBT power module lineup, designed for robust power conversion. It represents a high-performance discrete solution compared to integrated smart modules. The dual common emitter topology allows for flexible bridge leg configurations in medium to high-power inverters.
Check for direct substitutes within the APTGX series or compatible SP6C package variants. Ensure any replacement maintains the 1.7 kV voltage rating and similar current capacity. Verify pinout compatibility and thermal interface requirements before swapping components in existing designs.