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The APTGX600U170D4G is a single IGBT power module manufactured by Microchip Technology, utilizing silicon technology. It features a maximum collector-emitter voltage (VCEO) of 1.7 kV and a continuous collector current of 750 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.7 V and a gate-emitter leakage current of 200 nA. Maximum power dissipation is rated at 1.948 kW, with an operating temperature range from -40°C to +175°C. The module supports a maximum gate-emitter voltage of 20 V and employs screw mount installation.
Verify the specific ordering suffix against the official Microchip datasheet to ensure correct pinout and electrical characteristics. Confirm RoHS compliance status through the manufacturer's documentation before procurement. Check for any recent product change notices that may affect availability or specifications.
Select this component when system requirements demand a 1.7 kV rating with high current capacity. Ensure the cooling solution can handle the specified 1.948 kW power dissipation. Verify that the control circuitry provides the required 20 V gate drive limit. Confirm mechanical compatibility with the screw mount package style.
This module belongs to the PM-IGBT-TFS-D4 series from Microchip Technology. It represents a discrete power semiconductor solution within the broader portfolio of high-voltage IGBT modules. The D4 designation indicates the specific physical package format used for thermal and mechanical interface.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult the official Microchip replacement guide or contact technical support directly for validated cross-reference information.