APTGX75A170T3AG

APTGX75A170T3AG

$62.22
  • Description:PM-IGBT-TFS-SP3F
  • Series:-

SKU:f7cdb8e7e397 Category: Brand:

  
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Product Detailed Parameters

  • Description:PM-IGBT-TFS-SP3F
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • IGBT Type:-
  • Configuration:Half Bridge
  • Vce(on) (Max) @ Vge, Ic:2V @ 15V, 75A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:-
  • Voltage - Collector Emitter Breakdown (Max):1700 V
  • Current - Collector (Ic) (Max):145 A
  • Power - Max:524 W
  • Current - Collector Cutoff (Max):10 µA
  • Input Capacitance (Cies) @ Vce:7600 pF @ 25 V

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APTGX75A170T3AG

Overview

The APTGX75A170T3AG is a dual IGBT power module manufactured by Microchip Technology, utilizing silicon technology. It features a maximum collector-emitter voltage (VCEO) of 1.7 kV and a continuous collector current of 145 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.7 V and a gate-emitter leakage current of 150 nA. Maximum power dissipation is rated at 524 W, with an operating temperature range spanning from -40°C to +175°C. The module supports a maximum gate-emitter voltage of 20 V and employs screw mount installation.

Feature Summary

  • Dual configuration for high-voltage power switching applications
  • High thermal stability supporting operation up to 175°C junction temperature
  • Robust insulation and mechanical design suitable for screw mounting

Applications

  • High-voltage industrial motor drives
  • Medium voltage power conversion systems
  • Industrial inverter topologies requiring 1.7 kV blocking capability

Procurement Notes

Verify the specific suffix 'AG' against the official Microchip datasheet to confirm exact pinout and terminal configuration. Ensure the procurement channel provides the original manufacturer's documentation rather than third-party interpretations. Confirm RoHS compliance status directly from the latest product specification sheet before integration into regulated assemblies.

Selection Notes

Select this component when system requirements demand a 1.7 kV rating with dual IGBT functionality. Evaluate the 145 A continuous current limit against peak load demands and thermal management capabilities. Compare the 524 W power dissipation rating with available heatsinking solutions to ensure junction temperatures remain within the specified -40°C to +175°C operational window during steady-state and transient conditions.

Part Context

This module belongs to the Microchip IGBT power module portfolio, designed for robust performance in demanding electrical environments. It represents a discrete solution for high-voltage applications where integrated circuits cannot withstand the required potential differences. The packaging style facilitates direct mounting onto cold plates or chassis structures for efficient heat transfer.

Replacement Considerations

Consult Microchip's official cross-reference documentation for verified substitutes. Ensure any replacement maintains the 1.7 kV voltage rating and dual configuration. Verify mechanical compatibility of the screw mount interface and thermal resistance characteristics to prevent derating issues in existing designs.

APTGX75A170T3AGAPTGX75A170T3AG
$62.22
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