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Product Detailed Parameters
- Description：MOSFET 6N-CH 75V 120A SP6-P
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：6 N-Channel (3-Phase Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：75V
- Current - Continuous Drain (Id) @ 25°C：120A
- Rds On (Max) @ Id, Vgs：4.5mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：153nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：4530pF @ 25V
- Power - Max：138W
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP6
- Supplier Device Package：SP6-P
- Grade：-
- Qualification：-
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Overview
The APTM08TAM04PG is a six-channel N-channel MOSFET array manufactured by Microchip Technology, designed for high-power applications. It features a 75V drain-source voltage rating and supports a continuous drain current of 120A at 25°C. The device offers a maximum on-resistance of 4.5 milliohms at 60A with a 10V gate drive. Key electrical parameters include a maximum gate charge of 153nC at 10V and an input capacitance of 4530pF at 25V. It provides a maximum power dissipation of 138W and operates within a junction temperature range of -40°C to 150°C.
Feature Summary
- Six-channel N-channel configuration arranged as a three-phase bridge
- Base-mounted SP6-P package for efficient thermal management
- Low on-resistance optimized for high-current switching applications
Applications
- Three-phase motor drives
- Industrial power conversion systems
- High-current DC-DC converters
Procurement Notes
Verify the specific suffix PG against official Microchip documentation to confirm pinout and packaging details. Ensure compatibility with existing thermal interface materials for base-mounted installations. Confirm RoHS3 compliance status through current datasheets before integration into regulated designs.
Selection Notes
Select this component when a compact six-channel solution is required for three-phase topologies. Evaluate thermal resistance requirements against the 138W power dissipation limit. Compare gate charge specifications against driver capabilities to ensure adequate switching speed without excessive losses.
Part Context
This part belongs to the APTM08 series of power discrete modules from Microchip Technology. It utilizes silicon MOSFET technology housed in an SP6-P package. The module integrates multiple channels to simplify circuit layout and reduce component count in high-power electronic systems.
Replacement Considerations
Consult official Microchip substitution guides for verified alternatives. Cross-reference pinouts and thermal characteristics carefully when considering equivalent parts from other manufacturers.
