APTM100A12STG

Overview

The APTM100A12ST is a high-power MOSFET power module featuring Power MOS 7 technology. It integrates two N-channel MOSFETs in a phase leg configuration with parallel and series Schottky diodes. Key electrical parameters include a Drain-Source Breakdown Voltage (BVDSS) of 1000 V, a maximum continuous drain current (ID) of 68 A at Tc=25°C, and a maximum Drain-Source ON Resistance (RDS(on)) of 120 mΩ. The module includes an internal NTC thermistor for temperature monitoring and provides Kelvin source connections to minimize stray inductance.

Feature Summary

• Integrates rugged Power MOS 7 MOSFETs with low input capacitance and gate charge for high-frequency operation.
• Features symmetrical design with M5 power connections and Kelvin sources to reduce stray inductance.
• Includes internal NTC thermistor for precise junction temperature monitoring.
• Provides isolated package allowing direct mounting to heatsink with high isolation voltage.

Applications

• Motor control systems
• Switched Mode Power Supplies (SMPS)
• Uninterruptible Power Supplies (UPS)

Procurement Notes

Verify the component origin as Advanced Power Technology (APT), now part of Microchip, rather than Microsemi Corporation, which may appear in some distributor listings. Confirm the datasheet revision matches Rev 1 June 2004. Ensure the ordering suffix 'ST' corresponds to the specific pinout and packaging variant described in the official documentation before procurement.

Selection Notes

Select this module for applications requiring high voltage blocking capability up to 1000 V and robust avalanche energy ratings. The integrated parallel Schottky diodes offer fast recovery characteristics suitable for hard-switching applications. Consider the thermal resistance and required heatsinking for maintaining junction temperatures within the -40°C to 150°C operating range during high-current duty cycles.

Part Context

This component belongs to the APTM series of insulated gate bipolar transistor and MOSFET modules designed for industrial power conversion. It utilizes advanced Power MOS 7 planar technology to achieve low on-state resistance while maintaining high breakdown voltage. The module format allows for efficient integration into compact power electronics designs requiring high current density and reliable thermal management.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing PCB footprints and thermal interface requirements when considering alternative phase leg modules from other manufacturers.

FAQ

What is the function of the Kelvin source connections?

The Kelvin source connections provide a separate path for the gate drive return signal, minimizing the impact of stray inductance in the main power source path and ensuring accurate gate voltage control during switching transitions.

How does the internal thermistor aid in system protection?

The integrated NTC thermistor allows for real-time monitoring of the module's temperature. This data can be used by the control system to implement thermal protection mechanisms, preventing overheating and potential device failure under extreme load conditions.

What is the significance of the avalanche energy rating?

The avalanche energy rating indicates the module's ability to withstand repetitive and non-repetitive avalanche events without damage. This ruggedness is critical for motor control and inductive load applications where voltage spikes may occur during switching or fault conditions.