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The APTM100A18FTG is a MOSFET Power Module utilizing Power MOS 7® FREDFET technology. It features a Drain-Source Breakdown Voltage of 1000 V and a continuous drain current of 43 A at 25°C case temperature. The typical Drain-Source ON Resistance is 180 mΩ, with a maximum of 210 mΩ. The module includes an internal NTC thermistor for temperature monitoring and offers a junction-to-case thermal resistance of 0.16 °C/W. It supports repetitive avalanche energy ratings up to 50 mJ.
Verify the specific revision level against the datasheet Rev 3 documentation prior to procurement. Confirm that the ordering suffix FTG corresponds to the SP4 package outline and terminal configuration required for your PCB layout. Ensure handling procedures account for Electrostatic Discharge sensitivity as specified in application note APT0502.
Select this component when high-frequency operation and ruggedness are required. The Kelvin source pin simplifies gate drive design by minimizing stray inductance effects. The integrated thermistor allows for closed-loop thermal management without external sensors. Verify that the 1000V rating and 43A current capacity align with the peak load requirements of the target power stage.
This device belongs to the Microsemi Power MOS 7® family of FREDFET modules. It utilizes the SP4 package format, which provides symmetrical design and lead frames optimized for power connections. The module integrates two phase legs within a single isolated housing, offering a high level of integration for compact power electronics designs.
Consult official substitution lists or contact Microchip Technology support for verified equivalent part numbers. Do not assume pin compatibility with other MOSFET modules without verifying electrical parameters and mechanical dimensions against the original specification.
The Kelvin source provides a dedicated low-inductance path for the gate drive return, separate from the main power current path, ensuring accurate switching performance.
An internal NTC thermistor is included, with a nominal resistance of 50 kΩ at 25°C, allowing for direct temperature sensing via the module's signal terminals.
The maximum operating junction temperature range extends up to 150°C.