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The APTM100H18FG is a silicon-based N-channel MOSFET array manufactured by Microchip Technology. It features four channels configured as a full bridge within an SP6 base-mounted package. The device supports a drain-source voltage of 1000V and a continuous drain current of 43A at 25°C. Key electrical parameters include a maximum on-resistance of 210 milliohms at 10V gate drive, a gate charge of 372nC, and an input capacitance of 10400pF. It operates within a junction temperature range of -40°C to 150°C with a maximum power dissipation of 780W.
Verify the specific suffix FG against official Microchip documentation to confirm pinout compatibility and thermal characteristics. Ensure that the SP6 mounting interface matches the mechanical constraints of the target application. Cross-reference the datasheet for any recent product change notifications regarding assembly sites or material composition updates before finalizing procurement orders.
Select this component when a pre-configured full-bridge arrangement is required to reduce board space and interconnection complexity. The SP6 package is suitable for applications where direct thermal conduction to a cold plate or chassis is necessary. Evaluate the 210 milliohm on-resistance against system efficiency targets and ensure the gate drive circuitry can supply the specified 372nC charge requirement for optimal switching performance.
This part belongs to the APTM100 series of power discrete modules from Microchip Technology. The series encompasses various configurations including single switches, half-bridges, and full-bridges. These modules are designed for high-power industrial applications, offering integrated solutions that simplify the implementation of complex power stages compared to using discrete components.
Consult official substitution lists for verified equivalents. Generic cross-references may not match the specific SP6 mechanical footprint or internal bridge configuration.