APTM100H35FT3G

Overview

The APTM100H35FT3G is a silicon MOSFET module from Microchip Technology, configured as a full bridge. It utilizes FREDFET technology and is housed in the SP3 package. The device features a drain-source voltage (VDSS) of 1000V and a typical on-resistance (RDSon) of 350mΩ. At a case temperature of 80°C, it supports a continuous current of 17A.

Feature Summary

• Integrates FREDFET silicon technology for optimized switching performance
• Configured as a full bridge arrangement within a single module
• Designed for chassis mounting applications

Applications

• Industrial motor drives
• Power supply systems
• Inverter circuits

Procurement Notes

Verify the specific suffix '3G' against official Microchip documentation to confirm the exact package variant and manufacturing specifications. Ensure compatibility with thermal management requirements for the SP3 package. Cross-reference datasheet electrical characteristics with system design constraints before procurement.

Selection Notes

Select this component when a 1000V rated full bridge configuration is required. Consider the 350mΩ RDSon and 17A current rating at 80°C for thermal design. Evaluate FREDFET characteristics against application switching frequency needs. Confirm chassis mounting capabilities align with mechanical assembly plans.

Part Context

This part belongs to Microchip's power transistor array series. It represents a discrete solution using silicon MOSFETs rather than wide-bandgap materials like SiC. The SP3 package provides a standardized form factor for high-power density designs compared to larger industrial modules.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.