APTM100H35FTG

Overview

The APTM100H35FTG is a MOSFET module manufactured by Microchip Technology, featuring an N-channel configuration housed in the SP-4 package. It supports a drain-to-source voltage of 1000V and a continuous current rating of 22A. The device has a power dissipation capacity of 390W and utilizes chassis mounting for thermal management.

Feature Summary

• Integrates four N-channel MOSFETs configured as a full bridge within a single module
• Designed for high-voltage applications with 1000V drain-to-source capability
• Utilizes chassis mounting to facilitate efficient heat dissipation

Applications

• Industrial motor drives
• Power supply systems
• Inverter circuits

Procurement Notes

Verify the specific datasheet revision and electrical characteristics against the official Microchip Technology documentation before integration. Confirm that the SP-4 package dimensions and pinout align with the target PCB layout or chassis interface requirements. Ensure thermal management solutions are adequate for the specified 390W power dissipation under actual operating conditions.

Selection Notes

Select this component when a robust full-bridge MOSFET solution is required for high-voltage environments. The 1000V rating suits demanding industrial applications. Evaluate the 22A continuous current limit against peak load requirements. Consider the chassis mount form factor for compatibility with existing cooling infrastructure and mechanical constraints.

Part Context

This part belongs to the APTM series of power modules from Microchip Technology. These modules combine multiple discrete devices into a unified package to improve reliability and simplify assembly. The SP-4 designation indicates a specific physical footprint and terminal arrangement common in high-power semiconductor designs.

Replacement Considerations

Consult official Microchip cross-reference lists for verified substitutes. Generic equivalents may differ in switching speed, thermal resistance, or gate charge specifications.