APTM100H46FT3G

APTM100H46FT3G

$88.14
  • Description:MOSFET 4N-CH 1000V 19A SP3
  • Series:POWER MOS 8™

SKU:5e0b579ba3e3 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 4N-CH 1000V 19A SP3
  • Series:POWER MOS 8™
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:4 N-Channel (Full Bridge)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):1000V (1kV)
  • Current - Continuous Drain (Id) @ 25°C:19A
  • Rds On (Max) @ Id, Vgs:552mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id:5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs:260nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:6800pF @ 25V
  • Power - Max:357W
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SP3
  • Supplier Device Package:SP3
  • Grade:-
  • Qualification:-

Download product information

APTM100H46FT3G

Overview

The APTM100H46FT3G is a MOSFET module manufactured by Microchip Technology. It utilizes Silicon (Si) technology and belongs to the discrete and power modules sub-category. The component features an SP3 package configuration and is supplied in tube packaging. It is classified under MOSFET modules with a PM-MOSFET-FREDP-8-SP3 designation.

Feature Summary

  • Integrates MOSFET and FRED technologies within a single module structure
  • Designed for high-power discrete applications using silicon technology
  • Utilizes the SP3 package format for mounting

Applications

  • Power electronics systems requiring integrated switching and freewheeling functions
  • Industrial power conversion circuits
  • High-current discrete module implementations

Procurement Notes

Verify the specific datasheet version and product change notifications prior to procurement. Confirm that the SP3 package dimensions and pinout align with the target PCB footprint. Ensure the supplier provides original Microchip Technology documentation to validate authenticity and technical specifications.

Selection Notes

Select this component when a combined MOSFET and Fast Recovery Epitaxial Diode solution is required in a single package. Consider the SP3 form factor for space-constrained high-power designs. Evaluate thermal management requirements based on the module's silicon construction and intended operating conditions.

Part Context

This part is part of Microchip Technology's discrete and power modules portfolio. It represents a specialized integration of power semiconductor devices, combining active switching elements with passive rectification capabilities. The SP3 package indicates a specific mechanical housing standard used by the manufacturer for this class of power modules.

FAQ

What type of semiconductor technology does the APTM100H46FT3G use?

It uses Silicon (Si) technology.

Is the APTM100H46FT3G a standalone MOSFET or a module?

It is a MOSFET module that integrates MOSFET and FRED technologies.

What is the package type for this component?

The component uses the SP3 package configuration.

APTM100H46FT3GAPTM100H46FT3G
$88.14
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