APTM10AM02FG

APTM10AM02FG

$309.24
  • Description:MOSFET 2N-CH 100V 495A SP6
  • Series:-

SKU:448d25922e83 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 100V 495A SP6
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Half Bridge)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):100V
  • Current - Continuous Drain (Id) @ 25°C:495A
  • Rds On (Max) @ Id, Vgs:2.5mOhm @ 200A, 10V
  • Vgs(th) (Max) @ Id:4V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs:1360nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:40000pF @ 25V
  • Power - Max:1250W
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SP6
  • Supplier Device Package:SP6
  • Grade:-
  • Qualification:-

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APTM10AM02FG

Overview

The APTM10AM02FG is a power module manufactured by Microchip Technology, classified under MOSFET modules. It utilizes silicon technology and belongs to the PM-MOSFET-FREDPAC-5-SP6C series. The component is housed in an SP6 package and is designed for base mounting applications. It is RoHS compliant and intended for use in discrete and power module circuits.

Feature Summary

  • Integrates MOSFET and FRED technologies within a single module structure
  • Utilizes silicon-based semiconductor construction
  • Designed for robust base mounting configurations

Applications

  • Power electronics systems requiring integrated switching solutions
  • Industrial motor drive applications
  • Inverter circuits utilizing SP6 form factor modules

Procurement Notes

Verify the specific datasheet version when sourcing this component, as product change notifications may affect manufacturing details. Confirm that the SP6 package type matches your thermal management and mechanical design requirements. Ensure compatibility with the intended gate drive voltages and current ratings specified in the official technical documentation before integration.

Selection Notes

Select this module when a combined MOSFET and fast recovery diode solution is required in a compact SP6 footprint. Consider its silicon technology characteristics for standard temperature range operations. Evaluate the thermal performance capabilities against your system's heat dissipation needs, ensuring the base mount interface aligns with your heatsink design specifications.

Part Context

This component is part of Microchip's broader portfolio of discrete and power modules. It falls under the category of MOSFET modules, specifically leveraging the PM-MOSFET-FREDPAC-5-SP6C architecture. This series provides integrated power switching capabilities, distinguishing it from standalone discrete transistors by combining complementary devices into a unified package for enhanced system density.

APTM10AM02FGAPTM10AM02FG
$309.24
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