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The APTM10HM05FG is a MOSFET module manufactured by Microchip Technology, designed for high-power applications. It features an N-channel configuration with a drain-source voltage (VDSS) of 100V and a typical on-resistance (RDSon) of 4.5mΩ. The device supports a continuous current of 207A at a case temperature of 80°C and can handle a peak repetitive current (Idm) of 1100A. With a power rating of 780W, it utilizes the FREDFET silicon technology and is housed in an SP6C package.
Verify the specific ordering suffix and package variant against official Microchip documentation to ensure compatibility with your design requirements. Confirm that the SP6C package dimensions and mounting specifications align with your chassis constraints. Cross-reference the electrical parameters with your system's thermal and voltage limits before finalizing procurement decisions.
Select this component when a compact, high-current full-bridge solution is required for 100V applications. Consider its 207A continuous current rating and 780W power dissipation capability relative to your cooling strategy. Ensure the FREDFET characteristics match your switching frequency and efficiency targets compared to alternative silicon or wide-bandgap options.
This module belongs to Microchip's discrete and power module portfolio, leveraging established silicon MOSFET technology. It serves as a building block for power conversion stages, offering a consolidated solution compared to discrete component assemblies. The SP6C package provides a standardized form factor for industrial and commercial power electronics designs.
Consult official Microchip substitution guides for verified alternatives. No direct public substitute part numbers are confirmed in the provided data.