APTM10HM09FT3G

APTM10HM09FT3G

$134.17
  • Description:MOSFET 4N-CH 100V 139A SP3
  • Series:-

SKU:bb6fc0b199bd Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 4N-CH 100V 139A SP3
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:4 N-Channel (Full Bridge)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):100V
  • Current - Continuous Drain (Id) @ 25°C:139A
  • Rds On (Max) @ Id, Vgs:10mOhm @ 69.5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs:350nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:9875pF @ 25V
  • Power - Max:390W
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SP3
  • Supplier Device Package:SP3
  • Grade:-
  • Qualification:-

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APTM10HM09FT3G

Overview

The APTM10HM09FT3G is a silicon power MOSFET module manufactured by Microchip Technology. It features a full-bridge configuration with four N-channel legs. The device supports a drain-source voltage of 100 V and delivers a continuous drain current of 139 A at a case temperature of 25°C. The typical on-resistance is 0.0095 ohms. Designed for screw mounting, it utilizes an isolated package to facilitate direct heatsink attachment.

Feature Summary

  • Full-bridge topology integrating four independent N-channel legs within a single isolated package
  • Low junction-to-case thermal resistance enabling efficient heat dissipation
  • Solderable terminals provided for both power and signal connections

Applications

  • Welding converters
  • Switched Mode Power Supplies
  • Uninterruptible Power Supplies
  • Motor control systems

Procurement Notes

Verify the specific datasheet revision and product change notifications prior to procurement. Confirm that the ordering suffix matches the required package variant and compliance standards. Ensure thermal interface materials are compatible with the isolated package design. Validate pinout compatibility with existing PCB layouts or busbar structures before finalizing orders.

Selection Notes

Select this component for applications requiring high-frequency operation and low conduction losses in a compact form factor. The parallel leg capability allows for increased current handling when multiple units are utilized. Ensure the gate drive circuitry accommodates the input capacitance characteristics. Verify that the operating temperature range aligns with the system's thermal management capabilities.

Part Context

This module belongs to the FREDFET family of power MOSFETs from Microchip Technology. It is designed to replace discrete MOSFET assemblies in high-current applications. The SP3F packaging style provides a standardized footprint for industrial power electronics. It serves as a core switching element in bridge circuits where efficiency and reliability are critical.

Replacement Considerations

Public confirmed substitute part numbers: None.

APTM10HM09FT3GAPTM10HM09FT3G
$134.17
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