APTM120A80FT1G

APTM120A80FT1G

$62.86
  • Description:MOSFET 2N-CH 1200V 14A SP1
  • Series:-

SKU:1cf68ada0f09 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 1200V 14A SP1
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Half Bridge)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:14A
  • Rds On (Max) @ Id, Vgs:960mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id:5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs:260nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:6696pF @ 25V
  • Power - Max:357W
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SP1
  • Supplier Device Package:SP1
  • Grade:-
  • Qualification:-

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APTM120A80FT1G

Overview

The APTM120A80FT1G is a single-phase leg MOSFET power module manufactured by Microsemi. It features an 800 mΩ typical drain-source on-resistance at 25°C and supports a continuous drain current of 14 A at a case temperature of 25°C. The device has a 1200 V drain-source breakdown voltage and includes an integrated NTC thermistor for temperature monitoring. Packaged in the SP1 format, it provides isolated mounting with a 2500 V RMS isolation voltage between terminals and the case.

Feature Summary

  • Integrates Power MOS 8 Fast FREDFET technology for low on-resistance and fast intrinsic reverse diode performance
  • Includes an internal NTC thermistor for precise junction temperature monitoring
  • Features symmetrical design to minimize stray inductance
  • Provides direct heatsink mounting capability with an isolated package

Applications

  • Welding converters
  • Switched Mode Power Supplies
  • Uninterruptible Power Supplies
  • Motor control systems

Procurement Notes

Verify the specific revision status and datasheet version before procurement, as specifications may evolve. Confirm that the SP1 package outline matches your mechanical constraints. Ensure thermal interface materials are compatible with the isolated baseplate. Validate gate drive requirements against the specified threshold and charge parameters. Check for any product change notifications related to this component.

Selection Notes

Select this module when high-frequency operation and rugged avalanche energy ratings are required. The integrated thermistor simplifies thermal management compared to external sensing methods. Consider the 2500 V isolation rating for safety-critical applications. Evaluate the total gate charge against available driver capabilities to optimize switching losses.

Part Context

This component belongs to the APTM series of phase leg MOSFET modules from Microsemi. These modules utilize advanced silicon planar technology designed for high-power density applications. The series emphasizes low thermal resistance and robust packaging suitable for industrial environments.

Replacement Considerations

Public confirmed substitute part numbers: None identified.

APTM120A80FT1GAPTM120A80FT1G
$62.86
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