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APTM120DA30T1G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1200V 31A SP1. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APTM120DA30T1G
- Description：MOSFET N-CH 1200V 31A SP1
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：360mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs：560 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：14560 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：657W (Tc)
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Supplier Device Package：SP1
- Package / Case：SP1
Single FETs, MOSFETs datasheet and documents for APTM120DA30T1G
Single FETs, MOSFETs Overview
The APTM120DA30T1G is an N-Channel power MOSFET module manufactured by Microchip Technology. It features a 1200 V drain-source voltage rating and supports a continuous drain current of 31 A at case temperature. The device delivers a maximum power dissipation of 657 W under chassis mount conditions. It utilizes the POWER MOS 8 technology for enhanced performance. The module is housed in an SP1 package designed for screw mounting, ensuring robust mechanical stability for high-power applications.
Single FETs, MOSFETs Feature Summary
- Utilizes POWER MOS 8 technology for optimized switching characteristics
- Designed for chassis mount installation via screw fixation
- Provides high power dissipation capability for thermal management
Single FETs, MOSFETs Applications
- Industrial motor drives
- High-frequency power supplies
- Inverter circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific datasheet revision to confirm electrical parameters match design requirements. Ensure the SP1 package footprint aligns with the PCB layout or heatsink interface. Confirm RoHS compliance status if required by regulatory standards. Check for any product change notifications that may affect pinout or material composition before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when a single N-Channel MOSFET module with 1200 V blocking voltage is required. The 31 A continuous current rating suits moderate power levels where chassis mounting is preferred over PCB surface mount. Consider the 657 W dissipation limit against available cooling solutions. Verify gate drive compatibility with standard logic levels if applicable.
Single FETs, MOSFETs Part Context
This module belongs to Microchip's discrete and power modules category, specifically within the MOSFET modules subcategory. It represents a standalone power switching solution distinct from integrated driver packages. The SP1 packaging format indicates a standardized chassis-mount form factor used across various high-power industrial applications requiring reliable thermal transfer.
Single FETs, MOSFETs Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Engineers should verify pin compatibility and thermal resistance values when considering alternative manufacturers' modules with similar voltage and current ratings.
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