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Product Detailed Parameters
- Description：MOSFET 4N-CH 1200V 34A SP6
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：4 N-Channel (Full Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：34A
- Rds On (Max) @ Id, Vgs：348mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id：5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs：374nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：10300pF @ 25V
- Power - Max：780W
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP6
- Supplier Device Package：SP6
- Grade：-
- Qualification：-
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Overview
The APTM120H29FG is a full-bridge Power MOS 7 FREDFET module rated for 1200V drain-source breakdown voltage. It features a typical RDS(on) of 290mΩ and supports a continuous drain current of 34A at 25°C case temperature. The device includes an integrated fast intrinsic reverse diode with a forward voltage of 1.3V at 34A. Electrical characteristics specify a gate threshold voltage between 3V and 5V, total gate charge of 374nC, and avalanche energy ratings of 50J repetitive and 3000mJ single pulse.
Feature Summary
- Power MOS 7 FREDFET technology providing low on-resistance and fast switching performance
- Kelvin source connection designed to facilitate easy drive circuit integration
- Symmetrical design utilizing M5 power connectors to minimize stray inductance
- Isolated package architecture enabling direct mounting to heatsinks
Applications
- Welding converters
- Switched Mode Power Supplies
- Uninterruptible Power Supplies
- Motor control systems
Procurement Notes
Verify the specific revision level against official Microchip documentation prior to procurement. Confirm that the SP6 package outline and mounting torque specifications align with the mechanical constraints of the target application. Ensure electrostatic discharge handling procedures are strictly followed during installation.
Selection Notes
Select this component for high-frequency applications requiring robust avalanche capability and low thermal resistance. Evaluate the junction-to-case thermal resistance of 0.16°C/W against the required heat dissipation. Consider the 4000V RMS isolation voltage when designing safety barriers within the power stage.
Part Context
This module belongs to the APTM series of full-bridge MOSFET power modules manufactured by Microchip Technology. It utilizes the SP6 package format, which provides a compact footprint suitable for dense power electronics designs. The product integrates four N-channel devices into a single isolated unit.
Replacement Considerations
Consult official Microchip cross-reference documentation for verified substitute part numbers. Do not assume functional equivalence with other bridge configurations or voltage ratings without explicit datasheet confirmation.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 150°C.
Does the module include an integrated freewheeling diode?
Yes, the module incorporates a fast intrinsic reverse diode with specified forward voltage and reverse recovery time characteristics.
What is the recommended mounting torque for the terminals?
The recommended mounting torque for the M5 terminals is between 2 and 3.5 N.m.
