ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 200V 317A SP6
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：200V
- Current - Continuous Drain (Id) @ 25°C：317A
- Rds On (Max) @ Id, Vgs：5mOhm @ 158.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs：448nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：27400pF @ 25V
- Power - Max：1136W
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP6
- Supplier Device Package：SP6
- Grade：-
- Qualification：-
Download product information
Overview
The APTM20AM05FG is a MOSFET Power Module manufactured by Microchip Technology, utilizing Power MOS 7 FREDFET technology. It features an N-Channel configuration with a Drain-Source Breakdown Voltage of 200 V and a maximum Drain-Source ON Resistance of 5 mΩ at Tj = 25°C. The module supports a continuous drain current of 317 A at Tc = 25°C and includes a fast intrinsic reverse diode rated for 317 A continuous source current. Electrical characteristics include a total gate charge of 448 nC and a junction-to-case thermal resistance of 0.11 °C/W. The device operates within a junction temperature range of -40°C to 150°C.
Feature Summary
- Power MOS 7 FREDFET technology providing low RDSon, low input and Miller capacitance, and low gate charge.
- Fast intrinsic reverse diode with avalanche energy rating and rugged design.
- Kelvin source connection for easy drive and very low stray inductance via symmetrical design.
- Direct mounting to heatsink with isolated package and M5 power connectors.
Applications
- Welding converters
- Switched Mode Power Supplies
- Uninterruptible Power Supplies
- Motor control
Procurement Notes
Verify the specific suffix 'FG' against official documentation to confirm if it denotes a distinct variant or packaging difference compared to the base APTM20AM05F model. Ensure that sourcing channels provide valid traceability and authenticity certificates. Confirm compliance with RoHS directives and any regional export restrictions applicable to this semiconductor component before finalizing procurement.
Selection Notes
Select this module for high-frequency applications requiring outstanding performance and low profile. Consider the direct heatsink mounting capability and low junction-to-case thermal resistance for efficient cooling. Evaluate the Kelvin source terminal for simplified driver integration. Assess the avalanche energy rating and ruggedness for robust operation in demanding environments like motor control and SMPS.
Part Context
This component belongs to the APTM series of MOSFET Power Modules from Microchip Technology (formerly Advanced Power Technology). It integrates two N-channel MOSFETs into a single phase leg configuration. The module utilizes advanced Power MOS 7 technology to achieve high efficiency and reliability in power conversion systems.
FAQ
What is the RMS isolation voltage of the APTM20AM05FG?
The RMS isolation voltage between any terminal and the case is 2500 V when tested for 1 minute with an isolation current less than 1 mA at 50/60 Hz.
Does the APTM20AM05FG support repetitive avalanche operation?
Yes, the device is avalanche energy rated, supporting both repetitive and non-repetitive avalanche currents up to 89 A and repetitive avalanche energy up to 50 mJ.
What are the recommended mounting torque values for the terminals?
The recommended mounting torque is 2 to 3.5 N.m for M5 terminals.
