APTM20AM06SG

APTM20AM06SG

$248.63
  • Description:MOSFET 2N-CH 200V 300A SP6
  • Series:-

SKU:ed5afd5f8afc Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 200V 300A SP6
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Half Bridge)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):200V
  • Current - Continuous Drain (Id) @ 25°C:300A
  • Rds On (Max) @ Id, Vgs:7.2mOhm @ 150A, 10V
  • Vgs(th) (Max) @ Id:5V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs:325nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:18500pF @ 25V
  • Power - Max:1250W
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SP6
  • Supplier Device Package:SP6
  • Grade:-
  • Qualification:-

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APTM20AM06SG

Overview

The APTM20AM06SG is a power MOSFET module from Microchip Technology, packaged in the SP6C configuration. It features a phase leg topology with series and parallel diodes. The device utilizes silicon technology and has a typical on-resistance of 6 mΩ. Rated for a continuous current of 225 A, it supports a peak repetitive current of 1200 A and dissipates up to 1.25 kW. The module is designed for chassis mounting applications.

Feature Summary

  • Integrates a phase leg structure with dedicated series and parallel diode components within a single package.
  • Utilizes silicon-based MOSFET technology optimized for high-power switching operations.
  • Designed for robust thermal management with a specified power dissipation capacity of 1.25 kW.

Applications

  • Industrial motor drive systems
  • High-current power conversion circuits
  • Chassis-mounted power electronics assemblies

Procurement Notes

Verify the specific suffix 'SP6C' against official Microchip documentation to confirm the exact pinout and mechanical dimensions. Ensure that the required thermal interface materials are compatible with the chassis mount style. Cross-reference the datasheet for absolute maximum ratings to prevent operational exceedance during procurement validation.

Selection Notes

Select this component when a discrete solution combining MOSFETs and anti-parallel diodes is required for space-constrained designs. The 6 mΩ resistance value indicates suitability for low-loss conduction paths. Consider the 225 A rating relative to the expected load profile and ensure adequate heatsinking infrastructure is available for the 1.25 kW dissipation requirement.

Part Context

This module belongs to Microchip's PM-MOSFET product family, which integrates power switches and freewheeling diodes. The SP6C package variant provides a standardized footprint for industrial inverters. It serves as a building block for three-phase bridge configurations commonly found in variable frequency drives and renewable energy inverters.

Replacement Considerations

Consult official substitution lists for direct equivalents. Verify compatibility of the SP6C package dimensions and electrical characteristics before adopting alternative part numbers from other manufacturers or different Microchip series.

APTM20AM06SGAPTM20AM06SG
$248.63
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