APTM20AM10FTG

APTM20AM10FTG

$131.72
  • Description:MOSFET 2N-CH 200V 175A SP4
  • Series:-

SKU:4f3c9ddd524d Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 200V 175A SP4
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Half Bridge)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):200V
  • Current - Continuous Drain (Id) @ 25°C:175A
  • Rds On (Max) @ Id, Vgs:12mOhm @ 87.5A, 10V
  • Vgs(th) (Max) @ Id:5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs:224nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:13700pF @ 25V
  • Power - Max:694W
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SP4
  • Supplier Device Package:SP4
  • Grade:-
  • Qualification:-

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APTM20AM10FTG

Overview

The APTM20AM10FTG is a phase leg MOSFET power module containing two N-channel Power MOS 7 FREDFETs in an isolated SP4 package. It features a 200V drain-source breakdown voltage and a continuous drain current of 175A at 25°C case temperature. The maximum on-resistance is 12mΩ at 87.5A and 10V gate drive. Total gate charge is 224nC, with input capacitance of 13.7nF. Maximum power dissipation is 694W at 25°C, supported by a junction-to-case thermal resistance of 0.18°C/W. The operating junction temperature range spans from -40°C to 150°C.

Feature Summary

  • Power MOS 7 FREDFET technology providing low on-resistance, low gate charge, and fast intrinsic reverse diode characteristics.
  • Kelvin source connection for easy drive and very low stray inductance through symmetrical design and dedicated lead frames.
  • Integrated internal thermistor for precise temperature monitoring within the module.
  • Direct heatsink mounting capability with solderable terminals for both power and signal connections.

Applications

  • Welding converters
  • Switched Mode Power Supplies
  • Uninterruptible Power Supplies

Procurement Notes

Verify the specific revision level against the latest Microchip datasheet before integration. Confirm that the SP4 package mounting torque requirements are met during assembly. Ensure electrostatic discharge handling procedures are followed as the device is sensitive to ESD. Validate thermal interface material compatibility with the specified junction-to-case thermal resistance values.

Selection Notes

Select this component for high-frequency applications requiring rugged performance and avalanche energy rating. The Kelvin source pin simplifies gate drive circuitry by minimizing stray inductance effects. Consider the integrated thermistor for advanced thermal management strategies. Evaluate the 200V rating against system voltage peaks to ensure adequate safety margins.

Part Context

This part belongs to the APTM series of phase leg MOSFET power modules manufactured by Microchip Technology. It utilizes the Power MOS 7 FREDFET process, which combines low conduction losses with fast switching capabilities. The SP4 package provides electrical isolation and robust mechanical mounting for industrial power electronics environments.

Replacement Considerations

Consult official Microchip documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' modules without verifying pinout, thermal, and electrical specifications.

FAQ

What is the function of the Kelvin source in this module?

The Kelvin source provides a separate connection for the gate drive return path, eliminating voltage drops caused by source inductance and ensuring accurate threshold voltage control.

How does the internal thermistor assist in operation?

The internal NTC thermistor allows for direct monitoring of the module's internal temperature, enabling precise thermal protection and management without external sensors.

Is the device rated for repetitive avalanche conditions?

Yes, the APTM20AM10FTG is avalanche energy rated, supporting both repetitive and non-repetitive avalanche currents up to 89A and 50mJ respectively.

APTM20AM10FTGAPTM20AM10FTG
$131.72
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