SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The APTM20HM10FG is a four-channel N-channel power MOSFET module manufactured by Microchip Technology. It utilizes FREDFET and Power MOS 7 technology to deliver high-performance switching capabilities within the SP6 package. The device supports a drain-source voltage of 200V and a continuous drain current of 175A, with a pulsed drain current rating of 700A. Key electrical characteristics include an on-state resistance of 12mΩ and a power dissipation capacity of 694W. This module integrates four independent channels configured for bridge applications.
Verify component authenticity through authorized Microchip Technology distributors or certified supply chain partners. Confirm that the received units match the specific APTM20HM10FG designation and packaging standards. Request official documentation to validate manufacturing origin and quality compliance before integration into critical systems.
Select this module for designs requiring integrated multi-channel switching with high current handling. The SP6 package offers efficient thermal performance compared to discrete solutions. Ensure gate driver compatibility with the specified voltage levels and consider the 12mΩ on-resistance impact on conduction losses during system design.
This component belongs to Microchip's discrete power MOSFET portfolio, specifically leveraging their proprietary FREDFET technology. It serves as a solution for engineers seeking to reduce board space while maintaining high efficiency in power conversion stages. The SP6 form factor provides standardized mounting options for industrial equipment.
Public confirmed substitute part numbers are not available in the provided documentation. Consult Microchip Technology directly for qualified alternatives or cross-reference data sheets for compatible modules with similar voltage and current ratings.