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Product Detailed Parameters
- Description：MOSFET 2N-CH 500V 90A SP4
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：500V
- Current - Continuous Drain (Id) @ 25°C：90A
- Rds On (Max) @ Id, Vgs：45mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id：5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs：246nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：11200pF @ 25V
- Power - Max：694W
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP4
- Supplier Device Package：SP4
- Grade：-
- Qualification：-
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Overview
The APTM50AM38SCTG is a discrete semiconductor module manufactured by Microchip Technology, utilizing silicon technology. It belongs to the PM-MOSFET-7-SBD-SP4 product family, integrating MOSFET and Schottky Barrier Diode (SBD) components within a single package. The device is designed for power switching applications requiring integrated freewheeling capabilities. It is supplied in tube packaging and carries RoHS compliance details as specified by the manufacturer.
Feature Summary
- Integrates MOSFET and Schottky Barrier Diode functions into a single discrete semiconductor module.
- Utilizes silicon-based POWER MOS 7 technology for power switching applications.
- Designed with an SP4 package configuration for compact integration.
Applications
- Power supply circuits requiring integrated rectification
- Motor drive systems utilizing MOSFET switches
- Industrial power conversion modules
Procurement Notes
Verify the specific datasheet revision and electrical characteristics directly from Microchip Technology before integration. Confirm that the SP4 package dimensions and pinout align with your PCB layout requirements. Ensure thermal management solutions are adequate for the intended operating conditions. Check for any recent Product Change Notifications (PCN) that may affect form, fit, or function.
Selection Notes
Select this module when a combined MOSFET and SBD solution is required in a single package to reduce board space and parasitic inductance. Consider the silicon technology limitations compared to wide-bandgap alternatives if higher efficiency or temperature operation is needed. Verify that the SP4 package mounting style suits the mechanical constraints of the design.
Part Context
This component is part of Microchip's discrete semiconductor module portfolio, specifically under the POWER MOS 7 series. It represents a consolidation of power switching and freewheeling diode functions. The SP4 designation indicates a specific package type used for medium-power applications within the company's broader range of MOSFET-SBD modules.
