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The APTM50AM70FT1G is a single-channel N-Channel MOSFET module from the Power MOS 8 series, manufactured by Microsemi. It features a 500V drain-source breakdown voltage and a typical on-resistance of 70mΩ at Tj=25°C. The device supports a continuous drain current of 50A at Tc=25°C and includes an integrated NTC thermistor for temperature monitoring. Packaged in the isolated SP1 format with screw mounting, it offers low stray inductance and high ruggedness suitable for demanding power electronics applications.
Verify the specific suffix FT1G against the official datasheet documentation to confirm pinout compatibility and thermal characteristics. Ensure that the ordering information matches the exact part number variant required for your circuit design. Cross-reference the manufacturer's latest revision notes to account for any potential updates to the electrical specifications or packaging details before finalizing procurement.
Select this component when designing circuits requiring a 500V rated single-phase leg with low conduction losses. The integrated thermistor simplifies thermal management strategies compared to discrete solutions. Consider the SP1 package dimensions and torque requirements during PCB layout and mechanical assembly planning to ensure proper heat dissipation and reliable electrical connections.
This module belongs to the Power MOS 8 family, which utilizes advanced silicon planar technology to achieve superior performance metrics. The product line emphasizes high reliability and ruggedness, making it suitable for industrial environments. The SP1 package provides a standardized form factor for easy integration into existing power conversion architectures.
APTM50AM70UT1G
The maximum operating junction temperature range extends up to 150°C.
The device is avalanche energy rated, allowing it to withstand repetitive and non-repetitive avalanche currents.
Yes, the module features an isolated package with an RMS isolation voltage of 2500V between any terminal and the case.