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The APTM50DDA10T3G is a dual N-channel Power MOSFET module from Microchip Technology, housed in the SP-32 package. It features a drain-source breakdown voltage of 500 V and a continuous drain current of 37 A. The device has a maximum on-resistance of 10 mΩ per channel. Gate-source voltage limits are ±20 V. Operating temperature ranges from -40°C to +150°C junction temperature. Total power dissipation is rated at 208 W. The module utilizes screw mount installation for thermal management.
Verify the specific suffix T3G against the official Microchip datasheet to confirm RoHS compliance and tape-and-reel packaging details. Ensure the SP-32 package dimensions match your PCB layout requirements. Confirm that the gate charge specifications align with your driver capabilities for optimal switching performance.
Select this component when a dual N-channel solution is required for high-voltage applications up to 500 V. The low on-resistance makes it suitable for efficiency-critical designs. Consider the thermal resistance characteristics and ensure adequate heatsinking for the specified power dissipation levels in your application environment.
This part belongs to the AP (Advanced Power) series of discrete and power modules by Microchip Technology. It is designed for robust performance in demanding power electronics environments. The SP-32 package provides a standardized form factor for integration into various industrial and commercial power systems.
Consult official Microchip documentation for direct pin-compatible substitutes within the same voltage and current ratings. Verify electrical parameters such as Rds(on) and Qg before substitution to ensure circuit compatibility.